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| NTE2340 Silicon NPN Transistor Darlington Power Amp, Switch Features: D 60V Zener Diode Built-In Between Collector and Base D Very Small Fluctuation in Breakdown Voltages D Large Energy Handling Capability D High Speed Switching Absolute Maximum Ratings: (TC = +25C unless otherwise specified) Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 10V Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 10V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A Collector Power Dissipation, PC TA = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.3W TC = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Transition Frequency Turn-On Time Storage Time Fall Time Energy Handling Capability Symbol ICBO IEBO hFE (1) hFE (2) VBE(sat) fT ton tstg tf Es/b IC = 1A, L = 100mH, RBE = 100 Test Conditions VCB = 50V, IE = 0 VEB = 7V, IC = 0 VCE = 3V, IC = 4A VCE = 3V, IC = 8A IC = 4A, IB = 8mA VCE = 10V, IC = 0.5A, f = 1MHz VCC = 50V, IB1 = -IB2 = 8mA, IC = 4A Min - - 50 2000 500 - - - - - - 50 Typ - - - - - - - 20 0.5 4.0 1.0 - Max 100 2 70 5000 - 1.5 2.0 - - - - - V V MHz s s s mJ Unit A mA V Collector-Emitter Breakdown Voltage V(BR)CEO IC = 5mA, IB = 0 VCE(sat) IC = 4A, IB = 8mA C B E .343 (8.72) .059 (1.5) .148 (3.72) .256 (6.5) .043 (1.1) .406 (10.3) .043 (1.1) .413 (10.5) .032 (0.82) .100 (2.54) .020 (.508) B C E |
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